 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SDD320 Diode-Diode Modules 3 Type SDD320N08 SDD320N12 SDD320N14 SDD320N16 SDD320N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") 2 1 Symbol IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 Test Conditions Maximum Ratings 480 320 Unit A IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 11500 12200 9600 10200 662000 620000 460000 430000 -40...+150 150 -40...+125 A i2dt A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s o C 3000 3600 2.5-5/22-24 12-15/106-132 320 V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M8) Typical including screws SDD320 Diode-Diode Modules Symbol IRRM VF VTO rT QS IRM RthJC RthJK dS dA a per diode; DC current per module per diode; DC current per module TVJ=TVJM; VR=VRRM IF=600A; TVJ=25 C o Test Conditions Characteristic Values 40 1.2 0.75 0.63 760 275 0.129 0.065 0.169 0.0845 12.7 9.6 50 Unit mA V V m uC A K/W K/W mm mm m/s2 For power-loss calculations only TVJ=TVJM TVJ=125 C; IF=400A; -di/dt=50A/us o Creepage distance on surface Strike distance through air Maximum allowable acceleration FEATURES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD320 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD320 SDD320 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x SDD320 0.15 K/W 30 DC Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.129 0.131 0.132 0.132 0.133 ZthJC 0.10 0.05 Constants for ZthJC calculation: i 0 0.00 10-3 Rthi (K/W) 0.0035 0.0165 0.1091 ti (s) 0.0099 0.168 0.456 10-2 10-1 100 101 s 102 t 1 2 3 0.20 K/W 30 DC 0.15 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 ZthJK 0.10 0.05 Constants for ZthJK calculation: i Rthi (K/W) 0.0035 0.0165 0.1091 0.04 ti (s) 0.0099 0.168 0.456 1.36 1 2 3 4 0 0.00 10-3 10-2 10-1 100 101 s 102 t |
Price & Availability of SDD320
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |